Synergistic optimization of material innovation and interface engineering for COD mitigation in high-power GaN-based blue laser diodes

Abstract

Catastrophic optical damage (COD), driven by thermal runaway from localized facet absorption, remains the primary failure mode in high-power GaN-based blue lasers. Herein, we propose a synergistic optimization strategy integrating wide-bandgap lattice-matched dielectric film design with electron cyclotron resonance plasma deposition to simultaneously enhance interfacial stability and suppress non-radiative recombination. By depositing Al2O3, AlN, and AlON films on GaN cleaved facets, systematic characterization reveals that AlON exhibits superior performance: its COD threshold reaches 54 MW/cm2, 205% higher than that of Al2O3. This breakthrough stems from AlON's defect density suppression and balanced thermal management, coupled with its single-crystalline epitaxial growth at the GaN interface. The study establishes a paradigm for interface engineering in wide-bandgap semiconductors, paving the way for ultra-reliable high-power optoelectronic devices.