Applied Physics Letters

Surface termination of <b> <i>β</i> </b> -Ga2O3(100) as-cleaved single crystals

M Ming-Chao Kao (Centre for X-ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY 1 , Notkestraße 85, 22607 Hamburg,) L Lukas Paul Schewe (Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,) A Arub Akhtar (Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,) A Alina Vlad (Synchrotron SOLEIL 5 , L'Orme des Merisiers, 91190 Saint-Aubin,) T Thomas F. Keller (Centre for X-ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY 1 , Notkestraße 85, 22607 Hamburg,) K Karsten Henkel (Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,) S Saud Bin Anooz (Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,) A Andreas Popp (Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,) Z Zbigniew Galazka (Leibniz-Institut für Kristallzüchtung (IKZ) 2 , Max-Born-Straße 2, 12489 Berlin,) J Jan Ingo Flege (Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,) A Andreas Stierle (Centre for X-ray and Nano Science CXNS) V Vedran Vonk

Abstract

The surface of β-Ga2O3 single crystals cleaved along their (100) plane is investigated using surface x-ray diffraction and atomic force microscopy. The results show the surface to consist of a single, so-called B-termination, which means that the crystal cleaves at planes formed by edge-sharing oxygen octahedra, thereby breaking the longest and weakest Ga–O bonds. Refinement of the atomic positions results in small displacements from the bulk structure, at most approximately 0.01 Å. Atomic force microscopy suggests that relatively large terraces form together with steps of half the a-axis length of approximately 0.6 nm, which means that terraces have the same atomic termination, related by the crystal symmetry. These results are important as a fundamental property of β-Ga2O3 when processed or used in various semiconductor applications.

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Article Details

Volume / Issue Vol. 128, Issue 7
Published February 16, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (12)

M

Ming-Chao Kao

Centre for X-ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY 1 , Notkestraße 85, 22607 Hamburg,

L

Lukas Paul Schewe

Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,

A

Arub Akhtar

Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,

A

Alina Vlad

Synchrotron SOLEIL 5 , L'Orme des Merisiers, 91190 Saint-Aubin,

T

Thomas F. Keller

Centre for X-ray and Nano Science CXNS, Deutsches Elektronen-Synchrotron DESY 1 , Notkestraße 85, 22607 Hamburg,

K

Karsten Henkel

Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,

S

Saud Bin Anooz

Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,

A

Andreas Popp

Leibniz-Institut für Kristallzüchtung 4 , Max-Born-Straße 2, D-12489 Berlin,

Z

Zbigniew Galazka

Leibniz-Institut für Kristallzüchtung (IKZ) 2 , Max-Born-Straße 2, 12489 Berlin,

J

Jan Ingo Flege

Applied Physics and Semiconductor Spectroscopy, Brandenburg University of Technology Cottbus-Senftenberg 3 , D-03046 Cottbus,

A

Andreas Stierle

Centre for X-ray and Nano Science CXNS

V

Vedran Vonk

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