Surface-state mediated optical actuation of GaAs microcantilevers

A Ayelén Prado (Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,) D Diego Perez-Morelo (Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,) S Santiago Ferreyra (Instituto Balseiro, Universidad Nacional de Cuyo 3 , Av. Bustillo 9500, S. C. de Bariloche 8400,) L Leonardo de Jesus Salazar Alarcón (Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,) H Hernán Pastoriza (Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,)

Abstract

We demonstrate optical actuation of n-GaAs microcantilevers using homogeneous, nanowatt-level LED illumination. Intensity-modulated light induces a surface photo-voltage that changes the depletion layer at the GaAs surface, generating a time-dependent piezoelectric stress that drives flexural motion at mechanical resonance. Resonant actuation is achieved without focused beams, optical cavities, or complex heterostructures. Orientation-dependent static deflection, bias-polarity-dependent phase response, and negligible resonance-frequency shifts under illumination distinguish this mechanism from photothermal, electrostatic, and radiation-pressure effects. These results identify surface-state-mediated piezoelectric coupling as an efficient optomechanical interaction in GaAs, enabling low-power optical control of micro- and nanomechanical resonators.

Article Details

Volume / Issue Vol. 128, Issue 14
Published April 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

A

Ayelén Prado

Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,

D

Diego Perez-Morelo

Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,

S

Santiago Ferreyra

Instituto Balseiro, Universidad Nacional de Cuyo 3 , Av. Bustillo 9500, S. C. de Bariloche 8400,

L

Leonardo de Jesus Salazar Alarcón

Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,

H

Hernán Pastoriza

Dispositivos y Sensores, Centro Atómico Bariloche, CNEA 1 , Av. Bustillo 9500, S. C. de Bariloche 8400,