Surface morphology evolution in argon ion-beam polishing of barium titanate thin films

M Mingliang Zhao (School of Microelectronics, Shanghai University 1 , Shanghai 201800,) R Ruyuan Ma F Fangcheng Cao (School of Microelectronics, Shanghai University 1 , Shanghai 201800,) Y Yang Qiu X Xingyan Zhao (School of Microelectronics, Shanghai University 1 , Shanghai 201800,) S Shaonan Zheng (School of Microelectronics, Shanghai University 1 , Shanghai 201800,) Q Qize Zhong (School of Microelectronics, Shanghai University 1 , Shanghai 201800,) Y Yuan Dong (Soochow Institute for Energy and Materials Innovations, College of Energy) T Ting Hu (BNLMS, College of Chemistry and Molecular Engineering)

Abstract

Barium titanate (BaTiO3, BTO) is a promising material for integrated photonics, but surface roughness introduced during thin-film growth degrades optical performance. An argon (Ar) ion-beam polishing process is developed for BTO thin films. The effects of ion energy, beam current, incidence angle, and removed thickness on surface morphology evolution are systematically examined. An incidence-angle response function is used to describe the angular dependence of the morphology evolution. At near-normal incidence (0° to −30°), grain-induced surface undulations are suppressed by ion-induced surface-parallel atomic redistribution, which promotes surface smoothing. An effective polishing window is identified at 300 eV, 100 mA, and 0° to −30°. Under these conditions, the root mean square roughness is reduced from 5.69 to 1.34 nm, corresponding to a 76.5% reduction. In addition, post-polishing annealing at 600 °C in oxygen helps relieve Ar-induced compressive stress and facilitates recrystallization in the near-surface damaged region. These results provide a practical polishing–annealing route toward the integration of high-quality BTO thin films into low-loss photonic devices.

Article Details

Volume / Issue Vol. 128, Issue 18
Published May 04, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

M

Mingliang Zhao

School of Microelectronics, Shanghai University 1 , Shanghai 201800,

R

Ruyuan Ma

F

Fangcheng Cao

School of Microelectronics, Shanghai University 1 , Shanghai 201800,

Y

Yang Qiu

X

Xingyan Zhao

School of Microelectronics, Shanghai University 1 , Shanghai 201800,

S

Shaonan Zheng

School of Microelectronics, Shanghai University 1 , Shanghai 201800,

Q

Qize Zhong

School of Microelectronics, Shanghai University 1 , Shanghai 201800,

Y

Yuan Dong

Soochow Institute for Energy and Materials Innovations, College of Energy

T

Ting Hu

BNLMS, College of Chemistry and Molecular Engineering