Surface-dominant transport in Weyl semimetal NbAs nanowires for next-generation interconnects
Abstract
Ongoing demands for smaller and more energy-efficient electronic devices necessitate alternative interconnect materials with lower electrical resistivity at reduced dimensions. We report the synthesis of Weyl semimetal niobium arsenide (NbAs) nanowires through thermomechanical nanomolding with single crystallinity and controlled diameters down to 40 nanometers. The resistivity of NbAs nanowires decreases with decreasing diameter, and 40-nanometer-diameter nanowires exhibited a room-temperature resistivity of 10.5 ± 1.9 microhm·centimeters, which is ~70% lower than their bulk counterpart. Calculations attribute this resistivity reduction to surface-dominant conduction with a long carrier lifetime at finite temperatures. Further characterization of nanowires and bulk crystals revealed high breakdown current density, stability, and thermal conductivity. These properties highlight the potential of NbAs nanowires as next-generation interconnects that could surpass the limitations of current copper-based interconnects.
Article Details
Journal Info
Science
American Association for the Advancement of Science
Authors (26)
Yeryun Cheon
Department of Physics, Cornell University, Ithaca, NY, USA.
Mehrdad T. Kiani
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Yi-Hsin Tu
Industry Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
Sushant Kumar
IBM Research, Albany, NY, USA.
Nghiep Khoan Duong
Department of Physics, Cornell University, Ithaca, NY, USA.
Jiyoung Kim
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.
Lingcheng Kong
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.
Quynh P. Sam
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Han Wang
Satya K. Kushwaha
Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), The Johns Hopkins University, Baltimore, MD, USA.
Nicholas Ng
Platform for the Accelerated Realization, Analysis, and Discovery of Interface Materials (PARADIM), The Johns Hopkins University, Baltimore, MD, USA.
Seng Huat Lee
Department of Physics, The Pennsylvania State University, University Park, PA, USA.
Sam Kielar
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.
Chen Li
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.
Amelia Schaeffer
School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
Jack D. Coyle
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Dimitrios Koumoulis
Cornell Center for Materials Research, Cornell University, Ithaca, NY, USA.
Saif Siddique
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.
Zhiqiang Mao
Department of Physics, The Pennsylvania State University, University Park, PA, USA.
Gangtae Jin
Department of Electronic Engineering, Gachon University, Seongnam, South Korea.
Zhiting Tian
Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca, NY, USA.
Ravishankar Sundararaman
Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
Hsin Lin
Gengchiau Liang
Industry Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu, Taiwan.
Ching-Tzu Chen
IBM Thomas J. Watson Research Center, Yorktown Heights, NY, USA.
Judy J. Cha
Department of Materials Science and Engineering, Cornell University, Ithaca, NY, USA.