Superconducting spintronic device based on Fe3GaTe2/CsV3Sb5/Fe3GaTe2 van der Waals heterojunctions
Abstract
van der Waals (vdW) heterojunctions have emerged as highly promising candidates for next-generation spintronic devices, owing to their exceptional interface quality, scalability, and tunable electronic properties. Here, we report a vdW superconducting heterojunction based on the Fe3GaTe2/CsV3Sb5/Fe3GaTe2, which combines the strong perpendicular magnetic anisotropy of Fe3GaTe2 with the superconductivity and charge density wave order of the Kagome metal CsV3Sb5. Notably, this superconducting heterojunction exhibits a magnetoresistance of 0.25% at 2 K, approximately two times higher than that observed at elevated temperatures. The magnetic proximity effect in CsV3Sb5 modulates superconductivity by suppressing spin-singlet Cooper pairing and enabling spin-triplet states. The interplay between magnetism and superconductivity not only elucidates the coexistence of competing electronic orders in CsV3Sb5 but also highlights the potential of such heterojunctions for energy-efficient, high-performance spintronic devices. Our work establishes Fe3GaTe2/CsV3Sb5/Fe3GaTe2 as a promising platform for engineering spin-polarized superconducting states and advancing quantum computing technologies.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Jing Kong
Heshuang Wei
Jinyu Duan
Yuanyu Song
Institute of Quantum Materials and Devices, School of Electronic and Information Engineering, Tiangong University 1 , Tianjin 300387,
Gaomeng Hou
School of Material Science and Engineering, State Key Laboratory of Advanced Separation Membrane Materials, Tiangong University 2 , Tianjin 300387,
Pengfei Liu
Ping Wang
Delin Zhang
Yong Jiang