Superconducting spintronic device based on Fe3GaTe2/CsV3Sb5/Fe3GaTe2 van der Waals heterojunctions

J Jing Kong H Heshuang Wei J Jinyu Duan Y Yuanyu Song (Institute of Quantum Materials and Devices, School of Electronic and Information Engineering, Tiangong University 1 , Tianjin 300387,) G Gaomeng Hou (School of Material Science and Engineering, State Key Laboratory of Advanced Separation Membrane Materials, Tiangong University 2 , Tianjin 300387,) P Pengfei Liu P Ping Wang D Delin Zhang Y Yong Jiang

Abstract

van der Waals (vdW) heterojunctions have emerged as highly promising candidates for next-generation spintronic devices, owing to their exceptional interface quality, scalability, and tunable electronic properties. Here, we report a vdW superconducting heterojunction based on the Fe3GaTe2/CsV3Sb5/Fe3GaTe2, which combines the strong perpendicular magnetic anisotropy of Fe3GaTe2 with the superconductivity and charge density wave order of the Kagome metal CsV3Sb5. Notably, this superconducting heterojunction exhibits a magnetoresistance of 0.25% at 2 K, approximately two times higher than that observed at elevated temperatures. The magnetic proximity effect in CsV3Sb5 modulates superconductivity by suppressing spin-singlet Cooper pairing and enabling spin-triplet states. The interplay between magnetism and superconductivity not only elucidates the coexistence of competing electronic orders in CsV3Sb5 but also highlights the potential of such heterojunctions for energy-efficient, high-performance spintronic devices. Our work establishes Fe3GaTe2/CsV3Sb5/Fe3GaTe2 as a promising platform for engineering spin-polarized superconducting states and advancing quantum computing technologies.

Article Details

Volume / Issue Vol. 127, Issue 14
Published October 06, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

J

Jing Kong

H

Heshuang Wei

J

Jinyu Duan

Y

Yuanyu Song

Institute of Quantum Materials and Devices, School of Electronic and Information Engineering, Tiangong University 1 , Tianjin 300387,

G

Gaomeng Hou

School of Material Science and Engineering, State Key Laboratory of Advanced Separation Membrane Materials, Tiangong University 2 , Tianjin 300387,

P

Pengfei Liu

P

Ping Wang

D

Delin Zhang

Y

Yong Jiang