Sub-terahertz PAM4 modulator based on transmission characteristic reconstruction
Abstract
In this paper, we propose a sub-terahertz PAM4 modulator based on transmission characteristic reconstruction by combining meta-unit, GaAs Schottky diode, and fan branch lines. This method combined the significant electromagnetic resonant characteristics of meta-unit, the high-speed controllability of GaAs Schottky diode, and the high integration of on-chip transmission line together to realize high-speed modulation. Then, we achieve transmission characteristic reconstruction by adjusting the resonance strength under different applied voltages through fan branch lines, enabling high-order amplitude modulation of sub-terahertz waves. The experimental results show that the PAM4 modulation of sub-terahertz waves is achieved with a nearly linear variation of the transmission coefficient in the whole voltage range and a maximum modulation rate of 21 Gbps, providing a promising prospect for the development and application of integrated sub-terahertz direct high-order modulation technology.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (12)
Kesen Ding
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Chunyang Bi
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Yu Ao
Liyu Cheng
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Hailong Fang
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Yazhou Dong
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Hongji Zhou
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Xun Wang
Zhenpeng Zhang
The National Key Laboratory of Application Specific Integrated Circuit, Hebei Semiconductor Research Institute 4 , Shijiazhuang 050000,
Shixiong Liang
Sen Gong
School of Electronic Science and Engineering, University of Electronic Science and Technology of China 1 , Chengdu 610054,
Yaxin Zhang
Key Laboratory of Analytical Science and Technology of Hebei Province, Hebei Research Center of the Basic Discipline of Synthetic Chemistry, College of Chemistry and Materials Science