Sub-terahertz AlN/GaN resonant tunneling diode oscillators using split-ring resonators integrated with bow-tie antennas

Masahiro Murayama; Hisayoshi Motobayashi; Yukio Hoshina; Miwako Shoji; Yoshiro Takiguchi; Hiroyuki Miyahara; Takahiro Koyama; Noriyuki Futagawa

doi:10.1063/5.0273695

Sub-terahertz AlN/GaN resonant tunneling diode oscillators using split-ring resonators integrated with bow-tie antennas

M Masahiro Murayama (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) H Hisayoshi Motobayashi (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) Y Yukio Hoshina (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) M Miwako Shoji (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) Y Yoshiro Takiguchi (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) H Hiroyuki Miyahara (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) T Takahiro Koyama (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,) N Noriyuki Futagawa (Compound Semiconductor Development Department, Sony Semiconductor Solutions Corporation , Atsugi-shi, Kanagawa 243-0014,)

Abstract

We developed sub-terahertz oscillators employing GaN-based resonant tunneling diodes (RTDs) grown on semi-insulating c-plane GaN substrates using metal-organic chemical vapor deposition. The RTDs incorporated a GaN quantum well and AlN double barriers, with an InGaN layer as part of the collector-side spacer. This InGaN spacer significantly enhanced the resonant tunneling current compared to conventional GaN-only spacers, achieving a peak current density of up to 622 kA/cm2, peak-to-valley current ratio of 1.56, and a maximum negative differential conductance of 7.1 mS/μm2. The oscillator structure featured split-ring resonators integrated with bow-tie antennas, which improved the radiation efficiency on the low-frequency side, facilitating effective electromagnetic wave emission at an intended oscillation frequency. The fabricated AlN/GaN-RTD oscillators exhibited sub-terahertz oscillations in the 88–104 GHz frequency range. These findings contribute to advancing high-frequency sources for sub-terahertz and terahertz applications.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 126, Issue 24

Published June 16, 2025

DOI 10.1063/5.0273695

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences