Study on thermal quenching mechanism and recombination dynamics of Si-bound exciton transition in AlN
Abstract
Steady-state photoluminescence (PL) and time-resolved photoluminescence spectroscopy are employed to study near-band edge excitonic emission lines in an aluminum nitride (AlN) film over a range of temperatures. The thermal quenching of the neutral silicon-bound exciton (Si0X) emission peak in AlN is observed, which is caused by the thermally activated processes from Si0X to two types of free exciton (Γ1 and Γ5), along with a two-electron satellite (TES) transition as a competing pathway. Among these, the activation process to the higher-energy Γ1 free exciton state is predominant, which may be related to the symmetry of the exciton states. The non-monotonic temperature dependence of the TES emission intensity is observed, which originates from the predominance of the thermally activated TES transition rate at low temperatures, as opposed to the delocalization tendency of Si0X. Due to the rapid reduction in the nonradiative recombination lifetime, the PL lifetime of the Si0X emission peak decreases from 160 ps at 4.5 K to 15 ps at 80 K. Meantime, the radiative recombination lifetime increases with temperature, which further accelerates the thermal quenching of the Si0X emission peak to some extent.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Guoping Li
Frontier Institute of Science and Technology, Interdisciplinary Research Center of Frontier Science and Technology, State Key Laboratory for Strength and Vibration of Mechanical Structures, Institute of New Concept Sensors and Molecular Materials, Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials, Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province, Xi’an Key Laboratory of Electronic Devices and Material Chemistry
Ning Tang
Chen Ji
From the Warwick Medical School, Clinical Trials Unit, University of Warwick (K.C., C.J., J.P.N., J.B.L., J.M.M., F.M., C.N., H.N., A.-M.S., M.A.S., K.R.S., S.W., R.L., G.D.P.), and the Critical Care Unit, University Hospital Coventry and Warwickshire NHS Trust (M.A.S.), Coventry, Devon Air Ambulance (N.L., B.T.) and South Western Ambulance Service NHS Foundation Trust (R.O., S.W.), Exeter, East Midlands Ambulance Service NHS Trust, Nottingham (R.E.S.S., G.L.S., G.A.W.), East of England Ambulance Service NHS Trust, Cambridge (S.B., T.F.), Kingston University (T.Q.) and London Ambulance Service NHS Trust (R.T.F., J.K., J.F., A.M.-S.), London, North East Ambulance Service NHS Foundation Trust, Newcastle upon Tyne (K.C., E.B., M.L.), North West Ambulance Service NHS Trust, Bolton (S.B., A. Wright, M.W.), South Central Ambulance Service NHS Foundation Trust, Bicester (C.D.D., M.B., A.C., V.D.), South East Coast Ambulance Service NHS Foundation Trust, Crawley (G.B., J.W.), Welsh Ambulance Services University NH...
Qikun Wang
Ultratrend Technologies Co., Ltd 4 ., Room 518, Building 3, No. 503, Shunfeng Road, Liping District, Hangzhou City, Zhejiang 311199,
Liang Wu
Lei Fu
Department of Materials Process Engineering, Graduate School of Engineering, Nagoya University, Furu-cho, Chikusa-ku, Nagoya 464-8603, Japan
Shixiong Zhang
Shuaiyu Chen
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Erfei Zhang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Tianyu Zhang
State Key Laboratory of Coordination Chemistry, School of Chemistry
Fujun Xu
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Weikun Ge
Bo Shen
Department of Chemistry