Study of electronic band alignment in SiGeSn/GeSn quantum well via internal photoemission effect
Abstract
SiGeSn-based optoelectronic devices, which operate across a broad infrared wavelength range, have garnered significant attention. Among these, heterostructures incorporating quantum wells are particularly promising due to their enhanced carrier confinement. In such structures, the type of band alignment and the associated barrier heights are critical parameters, directly influencing device performance. In this work, we employ internal photoemission measurements to extract the effective barrier heights in a Si0.024Ge0.892Sn0.084/Ge0.882Sn0.118 single quantum well, which is pseudomorphically grown on a Ge0.9Sn0.1 buffer atop a Ge buffered Si substrate. The extracted effective barrier heights are approximately 22 ± 2 meV for electrons and 50 ± 2 meV for holes. Additionally, based on the IPE threshold energy of 555 ± 1 meV, we have experimentally identified a type-I band alignment between the GeSn well and SiGeSn barrier layers—an important finding for the design of efficient infrared photonic devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Justin Rudie
Material Science and Engineering Program, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Huong Tran
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72701,
Yang Zhang
Sylvester Amoah
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72701,
Sudip Acharya
Materials Science and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Hryhorii Stanchu
Institute for Nanoscience and Engineering, University of Arkansas 4 , Fayetteville, Arkansas 72701,
Mansour Mortazavi
Division of Research, Innovation and Economic Development University of Arkansas at Pine Bluff 4 , 1200 N. University Drive, Pine Bluff, Arkansas 71601,
Timothy A. Morgan
Naval Surface Warfare Center 5 , Electro-Optics Tech. Div. 300 Highway 361, Crane, Indiana 47522,
Gregory T. Forcherio
Naval Surface Warfare Center 5 , Electro-Optics Tech. Div. 300 Highway 361, Crane, Indiana 47522,
Greg Sun
Naval Surface Warfare Center 5 , Electro-Optics Tech. Div. 300 Highway 361, Crane, Indiana 47522,
Gregory Salamo
Institute for Nanoscience and Engineering, University of Arkansas 1 , Fayetteville, Arkansas 72701,
Wei Du
Department of Urological Surgery Zhujiang Hospital Southern Medical University Guangzhou China
Shui-Qing Yu
Department of Electrical Engineering and Computer Science, University of Arkansas 2 , Fayetteville, Arkansas 72710,