Stress and doping analysis of low n-doped GaN layers on various substrates by micro-Raman mapping
Abstract
In this work, using micro-Raman spectroscopy mapping, we propose a methodology to separate the stress effect from the n-doping effect on A1LO and E2H GaN phonon modes frequency for low n-doped (<1017 cm−3) GaN layers grown on various substrates (GaN, sapphire, and silicon). This methodology shows a linear relation between the two phonon modes, in which the slope corresponds to GaN biaxial stress coefficients ratio KA1LOB/KE2HB and is 0.76 ± 0.01. Our value may act as a useful guideline for selecting or refining KE2HB and KA1LOB values. Samples that are mainly biaxially stressed show good agreement with the linear relation independently of the substrate. As for GaN/GaN samples, the change of slope indicates that layers are predominantly under dislocation-induced stress. However, independently of the substrate, the y-intercept increases with the n-carrier concentration, which provides a qualitive estimation of the net doping.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (19)
Ndembi Ignoumba-Ignoumba
University de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS 1 , Ampère F-69621,
Camille Sonneville
University de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS 1 , Ampère F-69621,
Thomas Kaltsounis
Université Grenoble Alpes, CEA-LETI 2 , Grenoble 38000,
Vishwajeet Maurya
Université Grenoble Alpes, CEA-LETI 2 , Grenoble 38000,
Hala El Rammouz
Université Grenoble Alpes, CEA-LETI 2 , Grenoble 38000,
Mohammed El Amrani
Université Grenoble Alpes, CEA-LETI 2 , Grenoble 38000,
Maroun Dagher
CNRS, INSA de Lyon, Université de Lyon, Institut des Nanotechnologies de Lyon (INL) 3 , F-69621 Villeurbanne,
Florian Bartoli
Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory , Valbonne 06560,
Thibaud Guillemin
Université Côte d'Azur, CNRS, CRHEA 4 , F-06560 Valbonne,
Adrien Bidaud
I.E.M.N.—CNRS 5 , 59652 Villeneuve d'Ascq,
Eric Frayssinet
Université Côte d'Azur, CNRS, CRHEA 4 , F-06560 Valbonne,
Farid Medjdoub
I.E.M.N.—CNRS 5 , 59652 Villeneuve d'Ascq,
Hassan Maher
Laboratoire Nanotechnologies Nanosystèmes (LN2)-IRL3463, CNRS, Université de Sherbrooke, 3000 Boulevard de l'Université 6 , Sherbrooke, Quebec J1K 0A5,
Jean Marie Bluet
CNRS, INSA de Lyon, Université de Lyon, Institut des Nanotechnologies de Lyon (INL) 3 , F-69621 Villeurbanne,
Dominique Planson
University de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS 1 , Ampère F-69621,
Julien Buckley
Yvon Cordier
Université Côte d'Azur, CNRS, CRHEA, rue Bernard Grégory , Valbonne 06560,
Matthew Charles
Université Grenoble Alpes, CEA-LETI 2 , Grenoble 38000,
Cyril Buttay
University de Lyon, INSA Lyon, Université Claude Bernard Lyon 1, Ecole Centrale Lyon, CNRS 1 , Ampère F-69621,