Strain manipulation of spin-polarized topological phase in WSe2/CrI3 heterostructure

Abstract

Here, based on first-principles calculations and topological analysis, we show that the spin-polarized topological phase is present in a van der Waals (vdW) heterostructure WSe2/CrI3. We reveal that magnetism induced by proximity effects in the heterostructure breaks the time-reversal symmetry (TRS) and thus induces gapped topological edge states, exhibiting the TRS-breaking quantum spin Hall (QSH) effect. By applying a stress field, the WSe2/CrI3 heterostructure manifests enhanced spin polarization, Rashba splitting, and tunable bandgap. The TRS-breaking QSH effect observed in the WSe2/CrI3 heterostructure exhibits remarkable robustness against interlayer shearing. The distinct anisotropy associated with in-plane strain provides precise manipulation strategies for bandgap engineering. Notably, in-plane tensile strain can significantly increase the nontrivial bandgap by up to 98 meV, suggesting the magnetic WSe2/CrI3 heterostructure represents an outstanding platform for achieving the TRS-breaking QSH effect at room temperature. Our findings provide a theoretical foundation for the development of low-dissipation spintronic nanodevices.