Strain-induced Kramers–Weyl phase in III–V zinc blende systems

Abstract

We present theoretical observations on the topological nature of strained III–V semiconductors. By k·p perturbation, it can be shown that the strain-engineered conduction band hosts a Kramers–Weyl node at the Γ point. It is theoretically shown that a curated strain can create and then tune the sign of the topological charge. Furthermore, we outline experimental methods for both the realization and detection of strain-induced topological phase transitions.