Strain engineering for magnetoelectric coupling in flexible composite devices

G Guixin He (School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,) Y Yaoxiang Jiang (School of Physical Science and Technology, Inner Mongolia Key Laboratory of Microscale Physics and Atom Innovation, Inner Mongolia University 1 , Hohhot 010021,) T Tengfei Ma J Jianguo Niu Y Yulong Bai (Department of Chemistry, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China) N Ning Jiang (Sorbonne Université, CNRS , , ,) H Hong Chang (State Key Laboratory of Loess Science, Institute of Earth Environment, Chinese Academy of Sciences) S Shifeng Zhao (School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,)

Abstract

This study explores strain-dependent regulation of magnetoelectric (ME) properties in flexible composite films. A flexible ME device with cylindrical assemblies of SmFe2 nanoclusters embedded in Bi5Ti3FeO15 matrix was prepared by low-energy cluster-beam deposition and wet chemical methods. Experimental results reveal distinct performance variations under different bending conditions. The strain-mediated magnetoelectric coefficient (αE31) exhibits a 29% enhancement under compressive stress due to improved mechanical strain transfer. However, in the tensile state, it marginally decreases due to depressed strain transfer. Using stress engineering, we achieve tunable and predictable strain-mediated αE31 regulation, with strain serving as a key control parameter. Furthermore, the flexible ME device maintains exceptional mechanical stability, with less than 7% variation in αE31 after 10 000 bending cycles. This work establishes a strain-mediated ME coupling strategy for flexible electronics, providing critical insights for wearable applications and adaptive strain sensors.

Article Details

Volume / Issue Vol. 126, Issue 18
Published May 05, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

G

Guixin He

School of Physical Science and Technology and Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University 1 , Hohhot 010021,

Y

Yaoxiang Jiang

School of Physical Science and Technology, Inner Mongolia Key Laboratory of Microscale Physics and Atom Innovation, Inner Mongolia University 1 , Hohhot 010021,

T

Tengfei Ma

J

Jianguo Niu

Y

Yulong Bai

Department of Chemistry, Westlake University, 600 Dunyu Road, Hangzhou 310030, P. R. China

N

Ning Jiang

Sorbonne Université, CNRS , , ,

H

Hong Chang

State Key Laboratory of Loess Science, Institute of Earth Environment, Chinese Academy of Sciences

S

Shifeng Zhao

School of Physical Science and Technology, & Inner Mongolia Key Laboratory of Microscale Physics and Atomic Manufacturing, Inner Mongolia University , Hohhot 010021, the Nei Monggol Autonomous Region,