Strain-driven transition from pseudo-rhombohedral to aligned cubic phase of NiO (111) heteroepilayer

Y Yurong Luo (State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering) S Songhao Gu (School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,) Z Zhanhua Li (School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,) M Mei Cui (School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,) J Jinggang Hao (School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,) F Fang-fang Ren (School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,) S Shulin Gu (School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,) R Rong Zhang (Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China) J Jiandong Ye (School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,)

Abstract

Nickel oxide (NiO) has been historically misinterpreted as containing rhombohedral-like features, leading to structural ambiguity. Here, NiO epilayers of varying thickness were grown on sapphire to investigate the strain-driven domain evolution. At the initial stage (∼22 nm), compressive strain from oxygen sublattice mismatch stabilizes a uniform pseudo-rhombohedral appearance, atomically identified as high-density cubic antiphase domains. With increasing thickness, strain relaxes and neighboring antiphase domains merge via stacking inversion induced by dislocation glide, producing aligned cubic NiO with serrated boundary fronts under local strain inhomogeneity. Beyond 120 nm, the upper layer becomes fully aligned cubic phase with vanishing pseudo-rhombohedral features, accompanied by increased dislocation density up to 3.17 × 1010 cm−2. These results clarify the microscopic origin of pseudo-rhombohedral domains in FFC NiO and guide epitaxy for developing low-defect oxide heteroepitaxial devices.

Article Details

Volume / Issue Vol. 127, Issue 22
Published December 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Y

Yurong Luo

State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering

S

Songhao Gu

School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,

Z

Zhanhua Li

School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,

M

Mei Cui

School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,

J

Jinggang Hao

School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,

F

Fang-fang Ren

School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,

S

Shulin Gu

School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,

R

Rong Zhang

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China

J

Jiandong Ye

School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,