Strain-driven transition from pseudo-rhombohedral to aligned cubic phase of NiO (111) heteroepilayer
Abstract
Nickel oxide (NiO) has been historically misinterpreted as containing rhombohedral-like features, leading to structural ambiguity. Here, NiO epilayers of varying thickness were grown on sapphire to investigate the strain-driven domain evolution. At the initial stage (∼22 nm), compressive strain from oxygen sublattice mismatch stabilizes a uniform pseudo-rhombohedral appearance, atomically identified as high-density cubic antiphase domains. With increasing thickness, strain relaxes and neighboring antiphase domains merge via stacking inversion induced by dislocation glide, producing aligned cubic NiO with serrated boundary fronts under local strain inhomogeneity. Beyond 120 nm, the upper layer becomes fully aligned cubic phase with vanishing pseudo-rhombohedral features, accompanied by increased dislocation density up to 3.17 × 1010 cm−2. These results clarify the microscopic origin of pseudo-rhombohedral domains in FFC NiO and guide epitaxy for developing low-defect oxide heteroepitaxial devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (9)
Yurong Luo
State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering
Songhao Gu
School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,
Zhanhua Li
School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,
Mei Cui
School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,
Jinggang Hao
School of Electronic Science and Engineering, Nanjing University , Nanjing 210023,
Fang-fang Ren
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Shulin Gu
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,
Rong Zhang
Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China
Jiandong Ye
School of Electronic Science and Engineering, Nanjing University 2 , Nanjing 210023,