Strain-driven anisotropic SHG and Raman responses in NbOBr2

Z Zheng Wu (Shanghai SynTheAll Pharmaceutical Co., Ltd., No. 9 Yuegong Road, Jinshan District, Shanghai 201507, China) X Xin Lu Y Yang Dai J Jinpeng Xu J Jiawei Xue (National Synchrotron Radiation Laboratory) Q Qi Li Z Zhenxiao Zhang J Jingyi Wang S Shiyun Zheng (State Key Laboratory of Metastable Materials Science & Technology, Hebei Key Laboratory of Microstructure Materials Physics, School of Science, Yanshan University 3 , Qinhuangdao 066004,) Y Yu Chen Y Yinglun Sun (State Key Laboratory of Metastable Materials Science & Technology, Hebei Key Laboratory of Microstructure Materials Physics, School of Science, Yanshan University 3 , Qinhuangdao 066004,) Z Zhengong Meng (School of Flexible Electronics (Future Technologies) and Institute of Advanced Materials) C Chaofeng Gao Y Yingchun Cheng

Abstract

Due to the anisotropic structure with broken inversion symmetry, niobium oxide dihalide (NbOBr2) exhibits notable directional and nonlinear optical properties. However, experimental studies on controlling the anisotropic structure and nonlinear optical properties of NbOBr2 remain scarce. Here, the strain-dependent anisotropic second-harmonic generation (SHG) and Raman responses in NbOBr2 are revealed through the combination of SHG and Raman spectroscopy with first-principles calculations. A uniaxial strain along the c axis enhances the SHG intensity by approximately 1.5 times, whereas strain along the b axis suppresses the SHG intensity. First-principles calculations reveal that SHG variations originate from strain tunable Peierls distortion. The strain-mediated bond-length modifications well explain the anisotropic Raman response. The agreement between theoretical and experimental results conclusively validates the proposed strain-regulation mechanism of SHG and Raman spectra. This work suggests the promising application of NbOBr2 in flexible optoelectronics and strain tunable nonlinear optical devices.

Article Details

Volume / Issue Vol. 127, Issue 17
Published October 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

Z

Zheng Wu

Shanghai SynTheAll Pharmaceutical Co., Ltd., No. 9 Yuegong Road, Jinshan District, Shanghai 201507, China

X

Xin Lu

Y

Yang Dai

J

Jinpeng Xu

J

Jiawei Xue

National Synchrotron Radiation Laboratory

Q

Qi Li

Z

Zhenxiao Zhang

J

Jingyi Wang

S

Shiyun Zheng

State Key Laboratory of Metastable Materials Science & Technology, Hebei Key Laboratory of Microstructure Materials Physics, School of Science, Yanshan University 3 , Qinhuangdao 066004,

Y

Yu Chen

Y

Yinglun Sun

State Key Laboratory of Metastable Materials Science & Technology, Hebei Key Laboratory of Microstructure Materials Physics, School of Science, Yanshan University 3 , Qinhuangdao 066004,

Z

Zhengong Meng

School of Flexible Electronics (Future Technologies) and Institute of Advanced Materials

C

Chaofeng Gao

Y

Yingchun Cheng