Spin–phonon coupling and phonon dynamics in van der Waals antiferromagnetic CrSBr

X Xin Wei M Mengdi Li X Xiangxiang He (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023, Jiangsu,) Q Qiyun Xie (College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023, Jiangsu,) L Limin Chen L Ligang Ma (School of Electronic Engineering, Nanjing Xiaozhuang University 2 , Nanjing 211171,) G Guofeng Cheng

Abstract

As a vander Waals antiferromagnetic semiconductor, CrSBr exhibits unique anisotropy and hosts various physical phenomena (e.g., magnons, phonons, excitons, and polarons), showing great application potential. However, extensive investigations of its spin–phonon coupling and phonon dynamics are still limited. In this study, we employed a combination of group theory analysis and first-principles calculations and carried out comprehensive angle-resolved polarization-dependent and temperature-dependent Raman spectroscopy measurements on CrSBr single crystals. The abnormal shifts in phonon frequency and linewidth were observed below the Néel temperature, and the underlying spin–phonon coupling within CrSBr was unveiled. Additionally, phonon softening with increasing temperature was indicated by Raman spectroscopy, mainly due to phonon anharmonicity. Phonon scattering rates also increased with temperature due to enhanced phonon–phonon interactions, supporting the prediction of low thermal conductivity in CrSBr. The anisotropic structure of CrSBr, combined with spin–phonon coupling effects and phonon anharmonicity, holds significant potential for spintronics and thermoelectric applications.

Article Details

Volume / Issue Vol. 126, Issue 25
Published June 23, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

X

Xin Wei

M

Mengdi Li

X

Xiangxiang He

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023, Jiangsu,

Q

Qiyun Xie

College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications 1 , Nanjing 210023, Jiangsu,

L

Limin Chen

L

Ligang Ma

School of Electronic Engineering, Nanjing Xiaozhuang University 2 , Nanjing 211171,

G

Guofeng Cheng