Spin–current volume effect on iron gallium films

Y Yin-Chen Huang (Graduate School of Engineering, Tohoku University 1 , Sendai, Miyagi 980-8579,) Y Yi-Te Huang (Department of Physics, National Cheng Kung University 1 , Tainan 701,) H Hiroki Arisawa (Department of Applied Physics, The University of Tokyo, Tokyo, Japan.) T Takashi Kikkawa E Eiji Saitoh I Ioana Voiculescu (Mechanical Engineering Department, City College of New York 8 , New York, New York 10031,) T Takahito Ono (Graduate School of Engineering, Tohoku University 1 , Sendai, Miyagi 980-8579,)

Abstract

The application of spin–current volume effect (SVE) with volume magnetostriction of iron gallium (FeGa) films is examined for micro-diaphragm actuation. A silicon diaphragm measuring 1.5 × 1.5 mm2 is coated with Pt (100-nm-thick) and FeGa (100-nm-thick) thin films. An alternating charge current passed through the FeGa/Pt/Si diaphragm under a magnetic field perpendicular to the charge current generates an alternating spin current via the spin Hall effect in the Pt film, transferring angular momentum from the Pt film to the FeGa film. The injected spin current provides energy and changes the effective temperature, thereby varying the thermal fluctuation of the magnetic moments. In a magnetic material with volume magnetostriction, the thermal fluctuation of the magnetic moments affects its volume. When the spin fluctuations change, the volume magnetostriction induces a corresponding expansion or contraction of the material. Both electrodeposited and ion-beam sputter-deposited FeGa films are investigated, and it is observed that the FeGa film exhibits SVE. The force generated by the SVE is evaluated based on the vibration amplitude at the fundamental resonant mode. This study demonstrates that the force generated by the SVE is correlated with the volume magnetostriction and the deposition process.

Article Details

Volume / Issue Vol. 126, Issue 9
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Y

Yin-Chen Huang

Graduate School of Engineering, Tohoku University 1 , Sendai, Miyagi 980-8579,

Y

Yi-Te Huang

Department of Physics, National Cheng Kung University 1 , Tainan 701,

H

Hiroki Arisawa

Department of Applied Physics, The University of Tokyo, Tokyo, Japan.

T

Takashi Kikkawa

E

Eiji Saitoh

I

Ioana Voiculescu

Mechanical Engineering Department, City College of New York 8 , New York, New York 10031,

T

Takahito Ono

Graduate School of Engineering, Tohoku University 1 , Sendai, Miyagi 980-8579,