Spin-correlated optical transitions in room-temperature ferromagnetic Fe3GaTe2
Abstract
Fe3GaTe2 has been recently identified as a potential van der Waals (vdW) ferromagnetic material for spintronic devices, owing to long-range ferromagnetic order, strong perpendicular magnetic anisotropy, and high Curie temperature (TC) above room temperature. The band structure and electronic transitions are crucial for understanding magnetic properties of Fe3GaTe2, requiring a comprehensive investigation of the electronic behavior of Fe3GaTe2 under external magnetic fields. In this study, magnetic circular dichroism (MCD) spectroscopy was employed to examine the electronic transitions in Fe3GaTe2 at room temperature. Three distinct MCD peaks are clearly observed under the applied magnetic fields, which could correspond to three electronic transitions determined by first-principles density functional theory calculations of the band structure of Fe3GaTe2. Furthermore, the three transition bands would be correlated with the Fe d orbitals, as supported by the calculated orbital-resolved band structure of Fe3GaTe2. These findings offer insights into the electronic transitions and the underlying electronic structure in Fe3GaTe2, providing a basis for further fundamental research and potential applications in spintronic devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
Wanjiong Li
School of Materials Science and Engineering, Sun Yat-sen University 1 , Guangzhou 510275,
Jibin Li
Department of Clinical Research, Sun Yat-sen University Cancer Center, the State Key Laboratory of Oncology in South China, Collaborative Innovation Center for Cancer Medicine, Guangzhou, China
Nai Jiang
Xinhao Guo
School of Materials Science and Engineering, Sun Yat-sen University 2 , Guangzhou 510275,
Mingyi Chen
School of Materials Science and Engineering, State Key Laboratory of Solidification Processing, International Centre for Materials Discovery, Northwestern Polytechnical University
Yunzhen Hu
School of Materials Science and Engineering, Sun Yat-sen University 1 , Guangzhou 510275,
Quanlin Ye
Hangzhou Key Laboratory of Quantum Matter, School of Physics, Hangzhou Normal University 5 , Hangzhou 311121,
Xinman Chen
Guangdong Engineering Research Center of School of Electronic Science and Engineering (School of Microelectronics), South China Normal University 2 , Foshan 528225,
Shuxiang Wu
School of Materials Science and Engineering, Sun Yat-sen University 1 , Guangzhou 510275,
Chao Shen
State Key Laboratory of Semiconductor Physics and Chip Technologies
Shuwei Li