Smart Cut™ technology for the integration of diamond Schottky diodes on silicon substrate

Abstract

Diamond is a promising candidate for next-generation high-power electronic devices due to its exceptional thermal and electrical properties. This work demonstrates homoepitaxial regrowth on Smart Cut™ transferred diamond-on-Si substrates and the subsequent fabrication of electronic devices. Specifically, heavily p-doped (p++) and p-doped diamond layers were sequentially grown onto a 500 nm single-crystal heteroepitaxial diamond film that had been transferred to a silicon substrate via the Smart Cut™ process. Functional pseudo-vertical Schottky barrier diodes were successfully fabricated using aluminum contacts. Raman spectroscopy and capacitance–voltage measurements confirmed doping concentrations of 2×1020 and 1×1015 cm−3 for the p++ and p-doped layers, respectively. Current–voltage (I–V) characterization revealed robust rectification behavior, featuring a forward current density of 25 A cm−2 (at −5 V), a rectifying ratio of 106, and a breakdown voltage above 100 V (corresponding to an average electric field of 0.4 MV/cm). These results validate the viability of Smart Cut™ diamond-on-silicon as a scalable platform for advanced diamond power electronics.