Single-shot optical precessional magnetization switching of Pt/Co/Pt ferromagnetic trilayers

R Rui Xu (College & Hospital of Stomatology) C Chen Xiao X Xiangyu Zheng R Renyou Xu (Institute of Physics, Johannes Gutenberg-University Mainz, Mainz, Germany.) X Xiaobai Ning T Tianyi Zhu D Dinghao Ma K Kangning Xu (School of Integrated Circuit Science & Engineering, Beihang University 1 , Beijing 100191,) F Fei Xu Y Youguang Zhang (School of Electronic Information Engineering, Beihang University 2 , Beijing 100191,) B Boyu Zhang (Laboratory of Mathematics and Complex Systems, Ministry of Education, School of Mathematical Sciences) J Jiaqi Wei (Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Republic of Singapore)

Abstract

Ultra-fast magnetization switching triggered by a single femtosecond laser pulse has gained significant attention over the last decade for its potential in low-power consumption, high-speed memory applications. However, this phenomenon has been primarily observed in Gd-based ferrimagnetic materials, which are unsuitable for storage due to their weak perpendicular magnetic anisotropy (PMA). In this work, we demonstrated that applying a single laser pulse and an in-plane magnetic field can facilitate magnetic switching in a Pt/Co/Pt ferromagnetic trilayers stack within a specific laser power window. To further understand this phenomenon, we introduce a Cu layer to accelerate the re-establishment time of the anisotropy field of Pt/Co/Pt trilayers, which leads to bullseye-patterned magnetic switching. We have mapped phase diagram for these phenomena, and through micromagnetic simulations, we have determined that these switchings are influenced by thermal anisotropy torque, which can be modulated through PMA. These findings indicate that single-shot optical precessional magnetization reversal is feasible in a broader range of materials, opening avenues for the development of optical-magnetic memory devices.

Article Details

Volume / Issue Vol. 128, Issue 7
Published February 16, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

R

Rui Xu

College & Hospital of Stomatology

C

Chen Xiao

X

Xiangyu Zheng

R

Renyou Xu

Institute of Physics, Johannes Gutenberg-University Mainz, Mainz, Germany.

X

Xiaobai Ning

T

Tianyi Zhu

D

Dinghao Ma

K

Kangning Xu

School of Integrated Circuit Science & Engineering, Beihang University 1 , Beijing 100191,

F

Fei Xu

Y

Youguang Zhang

School of Electronic Information Engineering, Beihang University 2 , Beijing 100191,

B

Boyu Zhang

Laboratory of Mathematics and Complex Systems, Ministry of Education, School of Mathematical Sciences

J

Jiaqi Wei

Innovative Centre for Flexible Devices (iFLEX), Max Planck-NTU Joint Lab for Artificial Senses, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Republic of Singapore