Applied Physics Letters

Simulation of gain characteristics in AlGaN quantum wells under impact of inhomogeneous band broadening

S Sebastian Kölle (Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,) F Friedhard Römer (Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,) B Bernd Witzigmann (Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,)

Abstract

We demonstrate a novel band broadening model for the effects of alloy fluctuation on stimulated emission in aluminum gallium nitride (AlGaN) quantum wells (QWs). This model is used to study UV-C laser diode designs for different QW widths 3, 4.5, and 9 nm and varying Al mole fractions. We derive optimal parameters for target wavelengths of 270 and 240 nm. Using the 270 nm design as a case study, we analyze the impact of inhomogeneous broadening on the gain characteristic.

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Article Details

Volume / Issue Vol. 128, Issue 16
Published April 20, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (3)

S

Sebastian Kölle

Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,

F

Friedhard Römer

Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,

B

Bernd Witzigmann

Institute of Optoelectronics, Friedrich-Alexander-Universität Erlangen-Nürnberg , 91052 Erlangen,

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