Silicon nitride integrated electro-optic absorption modulator

E Evgeniy S. Lotkov (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) A Aleksandr S. Baburin (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) A Ali Sh. Amiraslanov (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) E Eugeny D. Chubchev (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) A Alexander V. Dorofeenko (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) E Eugeny S. Andrianov (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) E Evgeny V. Sergeev (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) K Kirill A. Buzaverov (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) S Sergey S. Avdeev (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) A Aleksey B. Kramarenko (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) S Sergey V. Bukatin (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) V Victor I. Polozov (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) O Olga S. Sorokina (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) D Daria P. Kulikova (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) A Alexander V. Baryshev (Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,) I Ilya A. Ryzhikov (FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,) Y Yuri V. Panfilov I Ilya A. Rodionov

Abstract

Silicon nitride (SiN) is currently the most prominent platform for photonics in the visible and near-IR wavelength bandwidth. However, realizing fast electro-optic modulators, the key components of any integrated optics platform remain challenging in SiN. Recently, transparent conductive oxides have emerged as a promising platform for photonic integrated circuits. In this work, we take an important step toward combining the advantages of both platforms, reporting for the high-speed indium tin oxide electro-optic modulators based on silicon nitride waveguides. We demonstrate a bandwidth higher than 1 GHz, 9.3-μm-length active element, and an insertion loss of 5.7 dB for a 300 nm-thickness SiN waveguide platform. Simulation results of optimized device designs indicate that further improvements are possible, offering promising opportunities for silicon nitride photonic integrated circuit platform combined with indium oxide-based layers.

Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (18)

E

Evgeniy S. Lotkov

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

A

Aleksandr S. Baburin

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

A

Ali Sh. Amiraslanov

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

E

Eugeny D. Chubchev

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

A

Alexander V. Dorofeenko

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

E

Eugeny S. Andrianov

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

E

Evgeny V. Sergeev

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

K

Kirill A. Buzaverov

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

S

Sergey S. Avdeev

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

A

Aleksey B. Kramarenko

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

S

Sergey V. Bukatin

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

V

Victor I. Polozov

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

O

Olga S. Sorokina

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

D

Daria P. Kulikova

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

A

Alexander V. Baryshev

Dukhov Automatics Research Institute (VNIIA) 2 , Moscow,

I

Ilya A. Ryzhikov

FMN Laboratory, Bauman Moscow State Technical University 1 , Moscow,

Y

Yuri V. Panfilov

I

Ilya A. Rodionov