Significant orbit-to-charge conversion in CoFeB/Pt/SrIrO3 trilayer by terahertz emission spectroscopy

W Weiwei Li (Beijing University of Chemical Technology , , ,) Y Yangkai Wang (Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, 96 Jinzhai, Hefei, Anhui 230026, P. R. China) H Hao Cheng J Jun Huang B Bing Xiong J Jianping Huang Q Qiuping Huang (Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, 96 Jinzhai, Hefei, Anhui 230026, P. R. China) Z Zhangzhang Cui (Hefei National Research Center for Physical Sciences at the Microscale, and Department of Materials Science and Engineering, University of Science and Technology of China 1 , Hefei, Anhui 230026,) Z Zhengping Fu (Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China (USTC), 96 Jinzhai, Hefei, Anhui 230026, P. R. China) Y Yalin Lu (Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China (USTC), 96 Jinzhai, Hefei, Anhui 230026, P. R. China)

Abstract

Orbitronics has been extensively explored theoretically and experimentally in orbital-charge conversion. The spin-charge conversion efficiency induced by the orbital Hall effect can be much larger than that of the spin Hall effect. However, orbitronics focuses primarily on light metal elements and their oxides, while exploring heavy metal elements and oxides is rare. In this Letter, we report significant enhancements in the ultrafast spin (orbit)-charge conversion for the CoFeB/Pt/SrIrO3 (SIO) trilayer using the terahertz emission spectroscopy, where the maximum enhancement calculated by the normalized terahertz emission amplitude is about three times that for the CoFeB/Pt bilayer. In addition, we observe a ∼2 orders of magnitude enhancement in the THz emission due to significant orbital transport in Pt-insertion heavy metal layer in the CoFeB/Pt/SIO heterostructure as compared to the CoFeB/SIO bilayer. Our findings not only demonstrate that the transition metals and their oxides exhibit strong inverse orbital Hall effect but also show that multilayer structures allow enhancing the spin-to-charge current conversion efficiency for THz applications, providing a direction to tailor THz emitters.

Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

W

Weiwei Li

Beijing University of Chemical Technology , , ,

Y

Yangkai Wang

Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, 96 Jinzhai, Hefei, Anhui 230026, P. R. China

H

Hao Cheng

J

Jun Huang

B

Bing Xiong

J

Jianping Huang

Q

Qiuping Huang

Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, 96 Jinzhai, Hefei, Anhui 230026, P. R. China

Z

Zhangzhang Cui

Hefei National Research Center for Physical Sciences at the Microscale, and Department of Materials Science and Engineering, University of Science and Technology of China 1 , Hefei, Anhui 230026,

Z

Zhengping Fu

Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China (USTC), 96 Jinzhai, Hefei, Anhui 230026, P. R. China

Y

Yalin Lu

Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China (USTC), 96 Jinzhai, Hefei, Anhui 230026, P. R. China