Signature of canted ferromagnetism in van der Waals Fe5−<i>x</i>GeTe2 flakes

X Xiaocui Wang (Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology 1 , Beijing 100081,) P Peiling Li Y Yongkai Li X Xue Yang Z Zhaozheng Lyu (Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,) F Fanming Qu (Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,) J Jie Shen X Xiunian Jing (Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 3 , Beijing 100190,) G Guangtong Liu L Li Lu J Junxi Duan (Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology 1 , Beijing 100081,) Z Zhiwei Wang (International Joint Research Laboratory of Nano-Micro Architecture Chemistry, Institute of Theoretical Chemistry and College of Chemistry)

Abstract

Van der Waals ferromagnetic materials, serving as an innovative platform for tailoring magnetic anisotropy and anisotropic magnetoresistance, offer great opportunities for designing and manipulating spintronic devices. In this study, we report the observation of temperature-dependent magnetic anisotropy and anisotropic magnetoresistance in high-quality single crystals of the van der Waals ferromagnet Fe5−xGeTe2. Due to the rhombohedral structure of Fe5GeTe2, the Fe atoms occupy three different sites, resulting in complex magnetic properties. As the electronic structure changes with decreasing temperature in Fe5−xGeTe2, the magnetic anisotropy is affected and results in a spin-flop transition from an out-of-plane orientation to a canted orientation. At low temperatures, the angle-dependent magnetoresistance shows a dramatic change, indicating anisotropic magnetoresistance in different crystallographic axis. The presence of room-temperature magnetism and giant anisotropic magnetoresistance suggests promising potential for Fe5−xGeTe2 in spintronic applications.

Article Details

Volume / Issue Vol. 126, Issue 26
Published June 30, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (12)

X

Xiaocui Wang

Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology 1 , Beijing 100081,

P

Peiling Li

Y

Yongkai Li

X

Xue Yang

Z

Zhaozheng Lyu

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,

F

Fanming Qu

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences 1 , Beijing 100190,

J

Jie Shen

X

Xiunian Jing

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 3 , Beijing 100190,

G

Guangtong Liu

L

Li Lu

J

Junxi Duan

Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology 1 , Beijing 100081,

Z

Zhiwei Wang

International Joint Research Laboratory of Nano-Micro Architecture Chemistry, Institute of Theoretical Chemistry and College of Chemistry