Shape control of few-layer 1T′-WTe2 flakes via space-restricted chemical vapor deposition

R Ruixiang Wang (Academy for Advanced Interdisciplinary Studies, PKU-Tsinghua Center for Life Science, Peking University) M Meysam Bagheri Tagani (Department of Physics, University of Guilan 2 , P.O. Box 41335-1914, Rasht,) S Sahar Izadi Vishkayi (School of Physics, Institute for Research in Fundamental Sciences (IPM) 3 , P.O. Box 19395-5531, Tehran,) L Li Zhang L Long-Jing Yin (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) Y Yuan Tian Z Zhihui Qin L Lijie Zhang

Abstract

Transition metal dichalcogenides, particularly WTe2, have attracted significant attention due to their unique electronic properties, such as the quantum spin Hall effect, which makes them promising for applications in topological electronics and quantum devices. However, achieving precise shape control during the growth of the low-symmetry 1T′ phase of WTe2 remains a significant challenge. In this work, we investigate the physical mechanism driving shape evolution in WTe2 during chemical vapor deposition growth. By utilizing a double-temperature zone to create a W concentration gradient, we observe a systematic evolution of shapes from irregular flakes to ribbons, triangles, hexagons, and snowflakes. This shape evolution is driven by temperature- and concentration-induced growth dynamics, where local concentration gradients and anisotropic growth behavior play a key role in the formation of distinct morphologies. Our experimental observations and density functional theory calculations show that increasing the Te:W ratio enhances the material's thermodynamic stability, with hexagonal flakes exhibiting greater stability than triangular ones. Our findings provide a deeper understanding of shape evolution in low-symmetry 2D materials with controlled morphology, enabling future applications in quantum devices.

Article Details

Volume / Issue Vol. 126, Issue 17
Published April 28, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

R

Ruixiang Wang

Academy for Advanced Interdisciplinary Studies, PKU-Tsinghua Center for Life Science, Peking University

M

Meysam Bagheri Tagani

Department of Physics, University of Guilan 2 , P.O. Box 41335-1914, Rasht,

S

Sahar Izadi Vishkayi

School of Physics, Institute for Research in Fundamental Sciences (IPM) 3 , P.O. Box 19395-5531, Tehran,

L

Li Zhang

L

Long-Jing Yin

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

Y

Yuan Tian

Z

Zhihui Qin

L

Lijie Zhang