Self-powered broadband photodetector with intelligent sensing based on a mixed-dimensional TiS3/WSe2 van der Waals heterojunction

J Jinpeng Zhao (Beijing Key Laboratory of Urban Underground Space Engineering, and Resource and Safety Engineering School, Department of Resource Engineering, University of Science and Technology Beijing) C Cheng Qi (College of Physics and Electronic Engineering, Hengyang Normal University 1 , Hengyang 421008,) Y Yu Jiang L Liming Zhang W Weidong Dai M Mengyu Zhang S Shangqing Xu (College of Physics and Electronic Engineering, Hengyang Normal University 1 , Hengyang 421008,) W Weichang Zhou (School of Physics and Electronics, Hunan Normal University 3 , Changsha 410081,) H Honglai Li T Tiefeng Yang (Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University 1 , Guangzhou 510632,) Y Yipeng Zhao Y Yicheng Wang X Xing Xu L Liang Ma

Abstract

Broadband, high-efficiency, and low-power multifunctional integrated photodetectors are essential for advanced applications, including imaging, optical communication, and remote sensing. Photodetectors based solely on two-dimensional materials still encounter challenges such as limited out-of-plane charge transport, relatively low in-plane carrier mobility, and inadequate photocurrent generation. Here, we report a mixed-dimensional TiS3/WSe2 van der Waals heterojunction photodetector with type-II band alignment, enabling efficient carrier separation. The device achieves broadband detection from 405 to 1050 nm, with a responsivity of 1.61 A/W, an external quantum efficiency of 261.21%, and a specific detectivity of 2.31 × 1011 Jones under a bias voltage of 1 V. Under zero bias, the device exhibits a responsivity of 52 mA/W, a specific detectivity of 1.19 × 1011 Jones, and an open-circuit voltage of 145 mV. Furthermore, integrated with a convolutional neural network, the TiS3/WSe2 photodetector enables handwritten digit recognition accuracies of up to 97.0% under biased operation and 88.7% under self-powered sensing conditions. These results establish the TiS3/WSe2 heterojunction as a promising platform for broadband, low-power, and self-powered intelligent optoelectronics.

Article Details

Volume / Issue Vol. 128, Issue 8
Published February 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

J

Jinpeng Zhao

Beijing Key Laboratory of Urban Underground Space Engineering, and Resource and Safety Engineering School, Department of Resource Engineering, University of Science and Technology Beijing

C

Cheng Qi

College of Physics and Electronic Engineering, Hengyang Normal University 1 , Hengyang 421008,

Y

Yu Jiang

L

Liming Zhang

W

Weidong Dai

M

Mengyu Zhang

S

Shangqing Xu

College of Physics and Electronic Engineering, Hengyang Normal University 1 , Hengyang 421008,

W

Weichang Zhou

School of Physics and Electronics, Hunan Normal University 3 , Changsha 410081,

H

Honglai Li

T

Tiefeng Yang

Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Jinan University 1 , Guangzhou 510632,

Y

Yipeng Zhao

Y

Yicheng Wang

X

Xing Xu

L

Liang Ma