Second-order topological insulators in Kekulé-patterned hexagonal biphenylene networks

N Ning-Jing Yang (Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University 1 , Fuzhou 350117,) H Hai Yang (Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science and Engineering) Z Zhigao Huang J Jian-Min Zhang

Abstract

Biphenylene network, a two-dimensional material, has recently been extensively studied, owing to its potential applications. Here, we introduce an experimentally synthesized configuration of hexagonal biphenylene network (h-BPN) as a second-order topological insulator (SOTI). We begin by discussing the higher-order topological origin of h-BPN, which is an extended model of the Kekulé lattice characterized by a multi-node π-conjugation. Through first-principles calculations and tight-binding model, we reveal SOTI in h-BPN, characterized by non-zero fractional corner charges. Furthermore, we show that by varying the number of biphenylene units, h-BPN exhibits adjustable second-order topological phases with alternating parity. Specifically, odd biphenylene indices in the h-BPN system correspond to a SOTI, while even indices result in a trivial insulator. We propose that the h-BPN evolves from the Kekulé lattice. These materials will have important applications in two-dimension devices as higher-order topological materials.

Article Details

Volume / Issue Vol. 126, Issue 3
Published January 20, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

N

Ning-Jing Yang

Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, College of Physics and Energy, Fujian Normal University 1 , Fuzhou 350117,

H

Hai Yang

Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science and Engineering

Z

Zhigao Huang

J

Jian-Min Zhang