Rubidium copper iodide single crystals for deep-ultraviolet detection and imaging

Z Zhongqing Zeng (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,) L Linfeng Chen B Baiqian Wang (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,) L Lunan Pei (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,) Z Zhigang Zang (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,) W Wensi Cai (Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,)

Abstract

Deep-ultraviolet (DUV) detectors are indispensable for a wide range of applications, including environmental monitoring, flame warning, and intelligent imaging systems. However, the development of DUV-sensitive materials with high performance, excellent stability, and facile fabrication remains challenging. Here, a novel rubidium copper iodide single crystal is synthesized via a facile solution-based approach and systematically studied both experimentally and theoretically. First-principles calculations reveal a wide bandgap and dispersive electronic bands near the band edges, suggesting efficient carrier transport while maintaining intrinsic DUV selectivity. Consequently, photodetectors fabricated from the single crystals exhibit excellent spectral selectivity in the DUV region, achieving a high responsivity of 3.9 A/W and a specific detectivity of 1.36 × 1012 Jones under 235 nm illumination. More importantly, the devices demonstrate remarkable operational robustness, maintaining stable photoresponse under continuous operation, elevated temperatures, and long-term storage conditions. Benefiting from the high performance, wavelength-selective DUV imaging is successfully demonstrated with high image contrast and resolution. This work highlights the potential of the prepared single crystals and detectors for next-generation DUV optoelectronic sensing and imaging technologies.

Article Details

Volume / Issue Vol. 129, Issue 4
Published July 27, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

Z

Zhongqing Zeng

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,

L

Linfeng Chen

B

Baiqian Wang

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,

L

Lunan Pei

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,

Z

Zhigang Zang

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University , Chongqing 400044,

W

Wensi Cai

Key Laboratory of Optoelectronic Technology and Systems (Ministry of Education), Chongqing University , Chongqing 400044,