Room-temperature topological spin textures and magnetic-field-induced skyrmion-bimeron switching in FeSnN3 monolayer

Q Qingyu Yan (School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore) G Guannan Li B Bingwen Zhang (Fujian Key Laboratory of Functional Marine Sensing Materials, Minjiang University 2 , Fuzhou 350108,) B Benling Gao (Department of Physics, Huaiyin Institute of Technology 1 , Huaian 223003,) G Guang Song (School of Environmental and Municipal Engineering, Xi’an University of Architecture and Technology) X Xiaokun Huang (School of Materials Science and Engineering, Jingdezhen Ceramic University 3 , Jingdezhen 333403,)

Abstract

Two-dimensional (2D) polar magnets have received considerable attention due to their intrinsic ability to host Dzyaloshinskii–Moriya interaction (DMI), which is crucial for generating topological spin textures such as skyrmions and bimerons. The ability to switch between skyrmions and bimerons is considered to be important for developing future computing architectures based on multiple different topological bits. Here, using first-principles calculations and Monte Carlo simulations, we predict that the FeSnN3 monolayer with a polar structure is a 2D ferromagnetic half-metal, exhibiting an out-of-plane magnetic anisotropy energy of 0.181 meV, a high Curie temperature TC of 510 K, and a substantial DMI of 2.96 meV. Micromagnetic simulations demonstrate that the DMI-induced skyrmions in the FeSnN3 monolayer can persist above room temperature under feasible magnetic fields. Notably, skyrmion-bimeron switching can be achieved by altering the direction of the external magnetic field. Our findings not only suggest that the FeSnN3 monolayer is a promising candidate for developing spintronic devices based on topological spin textures but also provide alternative insights into skyrmion-bimeron switching through magnetic field.

Article Details

Volume / Issue Vol. 126, Issue 4
Published January 27, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

Q

Qingyu Yan

School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

G

Guannan Li

B

Bingwen Zhang

Fujian Key Laboratory of Functional Marine Sensing Materials, Minjiang University 2 , Fuzhou 350108,

B

Benling Gao

Department of Physics, Huaiyin Institute of Technology 1 , Huaian 223003,

G

Guang Song

School of Environmental and Municipal Engineering, Xi’an University of Architecture and Technology

X

Xiaokun Huang

School of Materials Science and Engineering, Jingdezhen Ceramic University 3 , Jingdezhen 333403,