Room temperature low-loss etchless alumina ridge waveguides fabricated by pulsed laser deposition and lift-off

A A. Bernard (Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,) A A. Pereira R R. Orobtchouk (Institut des Nanotechnologies de Lyon, UMR 5270, CNRS, ECL, INSA, UCBL 2 , F-69134 Lyon,) S S. Medvedeva (Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,) A A. Belarouci (Institut des Nanotechnologies de Lyon, UMR 5270, CNRS, ECL, INSA, UCBL 2 , F-69134 Lyon,) S S. Guy (Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,) Y Y. Guyot (Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,) A A. Gassenq (Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,)

Abstract

Alumina is a remarkable material for integrated photonics thanks to its broad transparency window spanning from ultraviolet to infrared, its low propagation losses, and its high solubility for rare-earth elements. However, conventional device fabrication processes, particularly those involving etching, often introduce significant optical losses, hindering the performance of high-quality alumina components. Pulsed laser deposition combined with a lift-off process offers an effective alternative, addressing the limitations of etching-based methods. In this paper, we present low-loss alumina waveguides in the visible and infrared spectral ranges, characterized using two distinct approaches. By evaluating the propagation losses in alumina thin films deposited under varying conditions and across different waveguide widths, we achieve losses as low as 2.0 dB/cm. This work demonstrates the potential of this technique for precise alumina structuring, paving the way for innovative rare-earth-doped alumina photonic devices.

Article Details

Volume / Issue Vol. 126, Issue 21
Published May 26, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

A

A. Bernard

Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,

A

A. Pereira

R

R. Orobtchouk

Institut des Nanotechnologies de Lyon, UMR 5270, CNRS, ECL, INSA, UCBL 2 , F-69134 Lyon,

S

S. Medvedeva

Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,

A

A. Belarouci

Institut des Nanotechnologies de Lyon, UMR 5270, CNRS, ECL, INSA, UCBL 2 , F-69134 Lyon,

S

S. Guy

Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,

Y

Y. Guyot

Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,

A

A. Gassenq

Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, UMR5306 1 , F-69100 Villeurbanne,