Robust local dipole and weak inter-dipole coupling in two-dimensional ferroelectric CuInP2S6 monolayers

X Xiao-Ying Zhou (Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,) X Xiao-Feng Luo (Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,) L Li-Bin Wan (Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University 3 , Guangzhou 510275,) J Jin-Zhu Zhao (Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,)

Abstract

In this work, we uncover the physical origin of room-temperature stable and small-sized ferroelectric domains in monolayer CuInP2S6. Our phenomenological model, accurately fitted by first-principles datasets, elucidates the physical origins of previously reported order–disorder transitions and scale-free behavior in the studied system. Unlike conventional perovskite ferroelectrics, the ferroelectricity in monolayer CuInP2S6 stems from spontaneous intra-cell polar distortions with negligible inter-dipole coupling. While antiferroelectric ordering emerges as the ground state, its thermal stability competes with scale-free and distorted ferroelectric configurations. We quantitatively clarify this mechanism through our modeling, demonstrating how the degeneracy of metastable states enables coexisting order parameters across multiple length scales. This work fundamentally distinguishes weak-correlation ferroelectricity from conventional cooperative mechanisms, offering promising design principles for nanoscale ferroelectric devices, with particular promise for high-density memory applications.

Article Details

Volume / Issue Vol. 127, Issue 25
Published December 22, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

X

Xiao-Ying Zhou

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,

X

Xiao-Feng Luo

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,

L

Li-Bin Wan

Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, State Key Laboratory of Optoelectronic Materials and Technologies, Centre for Physical Mechanics and Biophysics, School of Physics, Sun Yat-sen University 3 , Guangzhou 510275,

J

Jin-Zhu Zhao

Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 1 , Guangzhou 510006,