Resolving carrier concentration of n-type AlN/GaN nanowires by scanning spreading resistance microscopy

L Lanpeng Qiang (INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,) D David Albertini (CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1 CPE Lyon, INL, UMR 5270 Villeurbanne 69622 France) R Rémy Vermeersch (Université Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC 3 , 17 Rue des Martyrs, 38000 Grenoble,) J Julien Pernot (University Grenoble Alpes, Grenoble INP, Institut Néel, CNRS 4 , 38000 Grenoble,) J Jean-Marie Bluet (INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,) B Bruno Daudin (Université Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC 3 , 17 Rue des Martyrs, 38000 Grenoble,) G Georges Brémond (INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,)

Abstract

The AlN/GaN nanowire structures hold significant promising for enhancing the emission efficiency of ultraviolet light-emitting diodes. However, their electrical doping mechanisms remain insufficiently understood and require indepth investigation. Scanning spreading resistance microscopy (SSRM) was performed to systematically investigate the dopant distribution of Si-doped AlN/GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy with Si cell temperatures ranging from 800 to 1000 °C. To ensure sample flatness at different NWs length, the NWs were embedded in a sol gel silica, and samples were subsequently polished in order to obtain a beveled profile. The nanowires doping trends were extracted from the SSRM data by deconvolution of silica and NWs responses. These studies demonstrated the axial uniformity and the radial uniformity of the NW core of Si.

Article Details

Volume / Issue Vol. 128, Issue 1
Published January 05, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

L

Lanpeng Qiang

INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,

D

David Albertini

CNRS, INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1 CPE Lyon, INL, UMR 5270 Villeurbanne 69622 France

R

Rémy Vermeersch

Université Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC 3 , 17 Rue des Martyrs, 38000 Grenoble,

J

Julien Pernot

University Grenoble Alpes, Grenoble INP, Institut Néel, CNRS 4 , 38000 Grenoble,

J

Jean-Marie Bluet

INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,

B

Bruno Daudin

Université Grenoble Alpes, CEA, IRIG-PHELIQS, NPSC 3 , 17 Rue des Martyrs, 38000 Grenoble,

G

Georges Brémond

INSA Lyon, Ecole Centrale de Lyon, Université Claude Bernard Lyon 1, CPE Lyon, CNRS, INL, UMR5270, Bâtiment Irène Joliot Curie 1 , 1 rue Enrico Fermi, 69622 Villeurbanne Cedex,