Remote epitaxial growth of single-crystal cesium tin bromide perovskite on germanium substrates
Abstract
We demonstrate the remote epitaxial growth of single-crystal cesium tin bromide (CsSnBr3) perovskite thin films on germanium substrates through a graphene-mediated van der Waals interface. The crystallographic orientation of CsSnBr3 is precisely controlled by the substrate orientation: single-domain growth with [100] orientation on Ge(100) and dual-domain growth with 45° rotation on Ge(110). Temperature-dependent nucleation studies reveal that increasing evaporation source temperature from 600 to 750 °C promotes larger domain formation due to enhanced adatom diffusion and reduced nucleation density. The transferred CsSnBr3 films exhibit excellent photoresponse with a stable photocurrent (0.03–0.05 μA) and fast response time, demonstrating the potential of remote epitaxy for high-performance lead-free perovskite optoelectronics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Ye Huang
Jiangxi Provincial Key Laboratory of Respiratory Diseases, Jiangxi Institute of Respiratory Diseases, The Department of Respiratory and Critical Care Medicine, The First Affiliated Hospital, Jiangxi Medical College, Nanchang University
Hao Wu
Miao Zhang
State Key Laboratory of Advanced Materials for Intelligent Sensing, Key Laboratory of Organic Integrated Circuits, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science
Ziao Tian
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences