Regulating anisotropy in 2H-MoTe2/CrOCl heterojunction with hysteresis effect

Abstract

MoTe2-based memristors demonstrate excellent performance, featuring high on/off ratios and endurance cycles. Harnessing interface coupling effects in heterostructures can further enhance their physical properties, expanding potential applications. Herein, anisotropic hysteresis behavior in MoTe2 is induced through van der Waals (vdW) interlayer coupling engineering. Additionally, H plasma surface treatment not only effectively enhances the hysteresis effect but also shifts its conductivity characteristics from unipolar to bipolar. Finally, in the MoTe2/CrOCl heterostructure, external magnetic fields influence the hysteresis properties of MoTe2, enabling magnetic reversible erasure and natural renewability. These results highlight the potential of MoTe2 for future applications in logic operations and rewritable memory units.