Reduction of carbon impurities in GaN grown by MOCVD using an NH3-plasma source

Hisashi Yamada; Tokio Takahashi; Takahiro Gotow; Naoto Kumagai; Yuya Yamashita; Tetsuji Shimizu; Xue-lun Wang; Hitoshi Miura; Nobuaki Takahashi

doi:10.1063/5.0322108

Reduction of carbon impurities in GaN grown by MOCVD using an NH3-plasma source

H Hisashi Yamada (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) T Tokio Takahashi (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) T Takahiro Gotow (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) N Naoto Kumagai (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) Y Yuya Yamashita T Tetsuji Shimizu (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) X Xue-lun Wang (Core Electronics Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 1 , Tsukuba, Ibaraki 305-8568,) H Hitoshi Miura N Nobuaki Takahashi (Tokyo Electron Ltd., Innovation X Lab. 4 , Minato-ku, Tokyo 107-6325,)

Abstract

In this work, we demonstrate GaN epitaxial growth by plasma-enhanced metalorganic chemical vapor deposition (MOCVD) using trimethylgallium [TMGa, Ga(CH3)3] and ammonia (NH3). Impacts of TMGa, NH3 molar flow rates, and plasma power on surface morphologies and carbon residual impurity concentrations in GaN epitaxial layer have been clarified. GaN surfaces showed step and terrace structures under a wide range of TMGa and NH3 molar flow rates. The residual carbon atomic concentrations in GaN epitaxial layers are found to be remarkably reduced by using NH3-plasma. The electrical characteristics of AlGaN/GaN-based high electron mobility transistor structure exhibits a lower sheet resistance when NH3-plasma is applied. This is mostly owing to the reduction in carbon residual impurities, which act as electron traps. The plasma MOCVD enables reduction in NH3 consumption or increase in GaN growth rate by 50%, which leads to enhancement of manufacturing productivity.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 128, Issue 9

Published March 02, 2026

DOI 10.1063/5.0322108

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences