Red emission enhancement via strong coupling between photonic–plasmonic band states in InGaN/GaN honeycomb nanocolumn plasmonic crystals

H Hiroto Otsuka (Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,) R Ryoma Shirotori (Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,) S Shotaro Hayakawa (Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,) J Jumpei Yamada K Koichi Okamoto R Rie Togashi (Nanotechnology Research Center, Sophia University 2 , Chiyoda, Tokyo 102-8554,) K Katsumi Kishino T Takao Oto (Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,)

Abstract

InGaN-based light-emitting diodes (LEDs) exhibit excellent emission efficiency in the blue spectral region but experience severe degradation of external quantum efficiency in the red region, primarily due to lattice strain and increased defect density. To address this limitation, we introduced surface plasmon polaritons into InGaN/GaN nanocolumn (NC) arrays arranged in a honeycomb lattice to enhance red-light emission. Deposition of Ag films on the photonic crystal NCs generated plasmonic crystals that allowed precise control of photonic–plasmonic band interactions. Angle-resolved photoluminescence measurements combined with electromagnetic field analysis revealed that strong coupling occurs when photonic and plasmonic field modes are spectrally and spatially matched. Rabi splitting was observed due to the strong coupling between photonic and plasmonic band states, and a 9.6-fold enhancement in red emission was achieved through the combined effects of strong and weak coupling. This controllable strong coupling between photonic and plasmonic band states provides a promising approach for overcoming the intrinsic efficiency limitations of InGaN-based red LEDs while simultaneously enhancing their optical functionality.

Article Details

Volume / Issue Vol. 128, Issue 16
Published April 20, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

H

Hiroto Otsuka

Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,

R

Ryoma Shirotori

Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,

S

Shotaro Hayakawa

Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,

J

Jumpei Yamada

K

Koichi Okamoto

R

Rie Togashi

Nanotechnology Research Center, Sophia University 2 , Chiyoda, Tokyo 102-8554,

K

Katsumi Kishino

T

Takao Oto

Department of Information Science and Technology, Yamagata University 1 , Yonezawa, Yamagata 992-8510,