Reconfigurable monolithic photonic circuit on III-nitride chip

Z Ziqian Qi (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) M Mingyuan Xie (School of Physics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 1 , Guangzhou 510275,) S Shuqin Chen J Jiahao Gou (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) L Linning Wang (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) Q Qunjie Liu (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) P Pengzhan Liu (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) Y Yingze Liang (GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,) Y Yongjin Wang (School of Geography, Nanjing Normal University)

Abstract

With respect to a III-nitride monolithic photonic circuit comprising multiple quantum well (MQW) diodes, InGaN/GaN MQW transmitters/boosters convert pulse optical signals into emitted light, whereas MQW modulators/receivers/monitors transform modulated shorter-wavelength photons into electronic signals. Here, five MQW diodes are interconnected via optical waveguides on a single III-nitride monolithic photonic chip, with an operating wavelength range of 385–416 nm. By integrating functional circuits with a time-division multiplexing (TDM) scheme, the light-emitting and light-detecting functionalities of these MQW diodes can be dynamically redefined, enabling a reconfigurable optical communication architecture. Each equipotential and fully mapped node serves as a core technology for scalable on-chip optical networks, allowing the reconfigurable III-nitride photonic chip and TDM scheme to integrate additional MQW components seamlessly.

Article Details

Volume / Issue Vol. 128, Issue 10
Published March 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Z

Ziqian Qi

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

M

Mingyuan Xie

School of Physics, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University 1 , Guangzhou 510275,

S

Shuqin Chen

J

Jiahao Gou

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

L

Linning Wang

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

Q

Qunjie Liu

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

P

Pengzhan Liu

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

Y

Yingze Liang

GaN Optoelectronic Integration International Cooperation Joint Laboratory of Jiangsu Province, Nanjing University of Posts and Telecommunications 1 , Nanjing 210003,

Y

Yongjin Wang

School of Geography, Nanjing Normal University