Quiescent power consumption of carbon-based analog operational amplifiers at low temperatures

Z Zhe Liu H Haojin Xiu (Beijing Key Laboratory of Space-Ground Interconnection and Convergence, School of Electronic Engineering, Peking University 3 , Beijing 100871,) N Nan Wei (College of Textiles & Clothing, State Key Laboratory of Bio-fibers and Eco-textiles) C Chunwei Wang (Institute of Quantum Electronics, School of Electronics, Peking University 1 , Beijing 100871,) H Haipeng Wang N Ningfei Gao H Haitao Xu (Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Porous Materials for Separation and Conversion, College of Chemistry and Materials, Fudan University, 220 Handan, Shanghai 200433, P. R. China) X Xiaoji Zhou

Abstract

In modern integrated circuit systems, quiescent power consumption increases with higher integration density, posing a fundamental limitation for further integration scaling. This challenge becomes even more critical in cryogenic environments, such as superconducting quantum computing and space exploration applications, where ultralow quiescent power consumption is essential for maintaining reliable circuit operation at extremely low temperatures. Using the unique low-temperature electrical properties of carbon nanotube materials, we fabricated a carbon nanotube field-effect transistor (CNT-FET) that exhibits significantly reduced currents under cryogenic conditions. These carbon-based FETs were implemented to construct a carbon nanotube analog operating amplifier (CNT-OPA). Comprehensive experimental characterization across a wide temperature range (293–10 K) revealed that the CNT-OPA's quiescent power consumption decreases at cryogenic temperatures without any degradation in the gain performance. These results demonstrate the strong potential of carbon-based analog amplifiers for cryogenic electronic applications, particularly in superconducting quantum computing systems and space electronics where conventional silicon-based devices face fundamental limitations.

Article Details

Volume / Issue Vol. 127, Issue 12
Published September 22, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Z

Zhe Liu

H

Haojin Xiu

Beijing Key Laboratory of Space-Ground Interconnection and Convergence, School of Electronic Engineering, Peking University 3 , Beijing 100871,

N

Nan Wei

College of Textiles & Clothing, State Key Laboratory of Bio-fibers and Eco-textiles

C

Chunwei Wang

Institute of Quantum Electronics, School of Electronics, Peking University 1 , Beijing 100871,

H

Haipeng Wang

N

Ningfei Gao

H

Haitao Xu

Laboratory of Advanced Materials, Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, State Key Laboratory of Porous Materials for Separation and Conversion, College of Chemistry and Materials, Fudan University, 220 Handan, Shanghai 200433, P. R. China

X

Xiaoji Zhou