Quasi-<i>in situ</i> redeposition-enabled stabilization of NiFe-based (oxy)hydroxides under high OER current density

M Meng-Yuan Xie (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) J Jia-Rong Huang (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) H Hui Wan J Jianhang Nie (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) M Ming-Hua Xian (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) Z Zhen-Yang Ou-Yang (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) G Gui-Fang Huang (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) W Wei-Qing Huang (Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,)

Abstract

NiFe-based (oxy)hydroxides are promising oxygen evolution reaction (OER) catalysts but suffer from severe Fe dissolution under operational conditions, rapidly resulting in a significant drop in activity. Here, we report a quasi-in situ redeposition strategy enabled by Ce doping to realize rapid capture and deposition of Fe species on the surface of NiFeOOH. During the OER process, dissolved Ce ions, owing to their large ionic radius and strong electrostatic attraction, enhance OH− concentration at the solid–liquid interface, accelerating Fe redeposition and suppressing Fe leaching into the electrolyte. This significantly enhances activity and durability under high-current density. The optimized Ce-NiFeOOH catalyst delivers an overpotential of 294 mV at 1000 mA cm−2 and maintains excellent stability at 500 mA cm−2. This strategy offers a feasible direction to design highly stable transition-metal-based (oxy)hydroxides for the OER.

Article Details

Volume / Issue Vol. 126, Issue 15
Published April 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

M

Meng-Yuan Xie

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

J

Jia-Rong Huang

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

H

Hui Wan

J

Jianhang Nie

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

M

Ming-Hua Xian

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

Z

Zhen-Yang Ou-Yang

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

G

Gui-Fang Huang

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

W

Wei-Qing Huang

Department of Applied Physics, School of Physics and Electronics, Hunan University 1 , Changsha 410082,