Quasi-homoepitaxy of hexagonal boron nitride on its own interfacial insertion monolayer
Abstract
We present an approach to improve the quality of hexagonal boron nitride (hBN) epilayer with a quasi-homoepitaxy mode through the utilization of a hBN interfacial insertion monolayer by using metal-organic chemical vapor deposition. First-principles calculations demonstrate that the insertion of hBN monolayer can not only eliminate the interaction from hetero-substrate but also enhance the surface migration rate during epitaxy. As a result with epitaxial growth, the reduction of initial nucleation density of hBN domains is observed, and meanwhile, the release of misfit stress and higher crystal quality are obtained. Ultimately, this research provides a quasi-homoepitaxial strategy of hBN on arbitrary hetero-substrate.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (15)
Peng Shen
Maowei Yang
Yiwei Duo
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Shini Yang
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Lucheng Yu
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Yaxiao Lou
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Zekai Hu
Yimeng Wang
Department of Chemistry
Feiya Xu
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Na Gao
Xiaohong Chen
Shengrong Huang
Fujian Polytechnic of Information Technology 4 , Fuzhou 350003,
Tongbo Wei
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Duanjun Cai
Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, College of Physical Science and Technology, Xiamen University 1 , Xiamen 361005,
Junyong Kang
Engineering Research Center of Micro-nano Optoelectronic Materials and Devices, Ministry of Education; Fujian Key Laboratory of Semiconductor Materials and Applications, CI Center for OSED, and Department of Physics, Xiamen University 1 , Xiamen 361005,