Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

M Matthew S. Wong (Materials Department, University of California 2 , Santa Barbara, California 93106,) T Tanay Tak (Materials Department, University of California 1 , Santa Barbara, California 93106,) A Andrea Y. Ni (Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara 93106, California,) K Kent Nitta (Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,) S Srinivas Gandrothula (Materials Department, University of California 1 , Santa Barbara 93106, California,) J JaeKwon Kim (Seoul Viosys 3 , 97-11, Sandan-ro 163beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, 15429,) N NamGoo Cha (Seoul Viosys 3 , 97-11, Sandan-ro 163beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, 15429,) U Umesh K. Mishra (Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106,) J James S. Speck (Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,) S Steven P. DenBaars (Electrical and Computer Engineering Department, University of California Santa Barbara 1 , Santa Barbara, California 93106,)

Abstract

The electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

Article Details

Volume / Issue Vol. 126, Issue 4
Published January 27, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

M

Matthew S. Wong

Materials Department, University of California 2 , Santa Barbara, California 93106,

T

Tanay Tak

Materials Department, University of California 1 , Santa Barbara, California 93106,

A

Andrea Y. Ni

Department of Electrical and Computer Engineering, University of California 2 , Santa Barbara 93106, California,

K

Kent Nitta

Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,

S

Srinivas Gandrothula

Materials Department, University of California 1 , Santa Barbara 93106, California,

J

JaeKwon Kim

Seoul Viosys 3 , 97-11, Sandan-ro 163beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, 15429,

N

NamGoo Cha

Seoul Viosys 3 , 97-11, Sandan-ro 163beon-gil, Danwon-gu, Ansan-si, Gyeonggi-do, 15429,

U

Umesh K. Mishra

Department of Electrical and Computer Engineering, University of California , Santa Barbara, California 93106,

J

James S. Speck

Materials Department, University of California Santa Barbara 2 , Santa Barbara, California 93106,

S

Steven P. DenBaars

Electrical and Computer Engineering Department, University of California Santa Barbara 1 , Santa Barbara, California 93106,