Quantification and improvement of doping uniformity on CVD grown 4H-SiC superjunction structures
Abstract
A quantitative analysis of 4H-SiC superjunction reveals a variation up to three orders of magnitude of Al distribution in the p-type column, indicating a uniformity value of 128% (σ/mean percentage). Since a strong incorporation tendency of residual N2 was observed on the (1–100) m-plane, with levels exceeding those of Al dopant, nitrogen is considered a suitable dopant to ensure n-type doping across various trench positions. Thus, the conventional fabrication sequence—forming n-type trench prior to p-type epilayer—was reversed: the n-type epilayer was grown on a p-type trench, resulting in an improved doping uniformity showing a value of 49%.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (5)
Shiyang Ji
Key Laboratory of Photochemistry, Institute of Chemistry
Kazutoshi Kojima
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST) , Onogawa 16-1, Tsukuba 305-8569,
Mitsuru Sometani
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST) , Onogawa 16-1, Tsukuba 305-8569,
Shinsuke Harada
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST) , Onogawa 16-1, Tsukuba 305-8569,
Yasunori Tanaka
Advanced Power Electronics Research Center (ADPERC), National Institute of Advanced Industrial Science and Technology (AIST) , Onogawa 16-1, Tsukuba 305-8569,