Pt-based multilayers toward energy-efficient spin–orbit torque devices

T Tzu-Chien Huang (Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,) K Kuan-Yu Chi (Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,) C Chun-Yi Lin (Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,) C Chun Yang M Ming-Yuan Song (Taiwan Semiconductor Manufacturing Company 2 , Hsinchu 308001,) C Chen-Yu Hu (School of Physical Science and Technology, Southwest University , Chongqing 400715,) X Xinyu Bao (Taiwan Semiconductor Manufacturing Company 2 , Hsinchu 308001,) C Chi-Feng Pai (Graduate School of Advanced Technology, National Taiwan University 1 , Taipei,)

Abstract

The 5d transition metal Pt is widely recognized as a spin Hall material for generating spin–orbit torques (SOTs) in Pt/ferromagnetic (FM) heterostructures. Despite its low resistivity, it exhibits a damping-like SOT efficiency (ξDL) significantly lower than other well-studied SOT materials, such as W and Ta, limiting its practical applications. In this study, systematic investigations are conducted on the incorporation of various insertion layers, including oxides (NiO, MgO), transition metals (Ta, W, Nb), and FM materials (Co, CoFeB), to enhance ξDL without the need for co-sputtered alloy engineering. Notably, MgO insertion exhibits the most pronounced impact, offering a broad tuning window for the spin current source resistivity (ρSCS) ranging from 49.7 to 215.4 μΩ cm. An optimized ξDL of approximately 0.52 is achieved in the [Pt(0.6)/MgO(0.4)]5/Pt/Co/Pt configuration. Utilizing tilted anisotropy as a field-free solution, this multilayer design demonstrates a significantly reduced zero-thermal critical switching current density (Jc0 = 4.28 × 1010 A/m2) compared to pure Pt (Jc0 = 6.20 × 1011 A/m2), underscoring its potential for practical applications. The combination of high ξDL, moderate ρSCS, and low Jc0 collectively enhances energy efficiency and performance in SOT magnetic random-access memory and next-generation spintronic applications.

Article Details

Volume / Issue Vol. 127, Issue 3
Published July 21, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

T

Tzu-Chien Huang

Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,

K

Kuan-Yu Chi

Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,

C

Chun-Yi Lin

Department of Materials Science and Engineering, National Taiwan University 1 , Taipei 10617,

C

Chun Yang

M

Ming-Yuan Song

Taiwan Semiconductor Manufacturing Company 2 , Hsinchu 308001,

C

Chen-Yu Hu

School of Physical Science and Technology, Southwest University , Chongqing 400715,

X

Xinyu Bao

Taiwan Semiconductor Manufacturing Company 2 , Hsinchu 308001,

C

Chi-Feng Pai

Graduate School of Advanced Technology, National Taiwan University 1 , Taipei,