Proximity-induced antisymmetric humps in Hall resistivity in Fe-doped monolayer WSe2

M Mengqi Fang (MOE Key Laboratory for Cellular Dynamics, Division of Life Sciences and Medicine) C Chunli Tang (Department of Physics, Auburn University 2 , Auburn, Alabama 36849,) S Siwei Chen Z Zitao Tang (Department of Mechanical Engineering, Stevens Institute of Technology 1 , Hoboken, New Jersey 07030,) M Min-Yeong Choi J Jae Hyuck Jang H Hee-Suk Chung (Electron Microscopy Group of Materials Science, Korea Basic Science Institute 3 , Jeonju, Jeollabuk-do 54907,) M Maya Narayanan Nair (Nanoscience Initiative, Advanced Science Research Center 4 , New York, New York 10031,) W Wencan Jin (Department of Physics, Auburn University 2 , Auburn, Alabama 36849,) E Eui-Hyeok Yang

Abstract

Non-collinear spin texture has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. While it has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of non-collinear spin texture in two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) monolayers is relatively lacking, hindering the understanding at the atomically thin scale. Here, we probe the temperature-dependent antisymmetric humps in Hall resistivity by utilizing the proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a 2D vdW DMS at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional antisymmetric peak features in the temperature-dependent measurements. These peaks are attributed to the magnetic features at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic and spintronic applications.

Article Details

Volume / Issue Vol. 126, Issue 10
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

M

Mengqi Fang

MOE Key Laboratory for Cellular Dynamics, Division of Life Sciences and Medicine

C

Chunli Tang

Department of Physics, Auburn University 2 , Auburn, Alabama 36849,

S

Siwei Chen

Z

Zitao Tang

Department of Mechanical Engineering, Stevens Institute of Technology 1 , Hoboken, New Jersey 07030,

M

Min-Yeong Choi

J

Jae Hyuck Jang

H

Hee-Suk Chung

Electron Microscopy Group of Materials Science, Korea Basic Science Institute 3 , Jeonju, Jeollabuk-do 54907,

M

Maya Narayanan Nair

Nanoscience Initiative, Advanced Science Research Center 4 , New York, New York 10031,

W

Wencan Jin

Department of Physics, Auburn University 2 , Auburn, Alabama 36849,

E

Eui-Hyeok Yang