Proximity-driven metallization of germanene on NiTe2 via interfacial coupling
Abstract
Epitaxial germanene layers have been grown on a NiTe2 substrate, and their structural and electronic properties were systematically investigated using scanning tunneling microscopy (STM) and scanning tunneling spectroscopy. The as-grown germanene exhibits a honeycomb structure with a lattice constant of 3.9 Å and a (1 × 1) structure relative to the substrate lattice. The differential conductivity shows a V-shaped profile, characteristic of a two-dimensional Dirac system, with its minimum lying close to the Fermi level yet remaining non-zero. By combining STM observations with first-principles calculations, we attribute this phenomenon to charge transfer between the NiTe2 substrate and germanene, thereby leading to the emergence of a metallic state in germanene. This finding provides a valuable framework for understanding the interplay between structural and electronic properties in this system. Furthermore, these results lay a solid foundation for exploring potential applications of germanene and open up promising avenues for future research.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (4)
Dan Mu
Jin Li
Yundan Liu
Jianxin Zhong
Hunan Key Laboratory for Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, and School of Physics and Optoelectronics, Xiangtan University 1 , Hunan 411100,