Promoting weak coupling of monolayer ZnSe with noble metal substrates

H Hengwei Huang (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) H Hongxing Li Y Yanlin Tao (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) C Chen Zhang (Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics) B Bo Li W Wei-Bing Zhang (Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology 2 , Changsha 410114,) Y Yuan Tian L Long-Jing Yin (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) L Lijie Zhang L Li Zhang Z Zhihui Qin

Abstract

In the field of optoelectronics, two-dimensional (2D) materials with tunable interfacial structures and bandgap demonstrate significant potential. This study examines ZnSe, a representative II–VI binary compound, synthesized as a monolayer on single-crystal noble metal surfaces. The interfacial structure evolution and electronic interaction were investigated by scanning tunneling microscopy/spectroscopy in conjunction with theoretical calculations. On the Au(111) substrate, the twist angle between ZnSe and Au(111) transitions from 19° to 0° upon annealing, accompanied by reduced interfacial coupling due to decreased charge doping from Au(111). While ZnSe exhibits metallic features on Au(111), it displays semiconducting characteristics with a small bandgap on the Ag(111) substrate, indicating substantially weaker interfacial interaction with Ag(111) compared to Au(111). This research paves a practical way for achieving a tunable bandgap in monolayer ZnSe, presenting a promising candidate for photocatalysis and photodetector applications.

Article Details

Volume / Issue Vol. 127, Issue 7
Published August 18, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

H

Hengwei Huang

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

H

Hongxing Li

Y

Yanlin Tao

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

C

Chen Zhang

Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics

B

Bo Li

W

Wei-Bing Zhang

Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, School of Physics and Electronic Sciences, Changsha University of Science and Technology 2 , Changsha 410114,

Y

Yuan Tian

L

Long-Jing Yin

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

L

Lijie Zhang

L

Li Zhang

Z

Zhihui Qin