Probing the band structure and phonon dynamics in Fe mediated Cu2SnS3 for thermoelectric applications

P Parvathi Krishna (Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603203,) V V. Vijay (Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603 203,) C C. Kanagaraj (Nanotechnology Research Centre, Faculty of Engineering and Technology, SRM Institute of Science and Technology 3 , Kattankulathur 603203,) J J. Archana (Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603 203,) S S. Ponnusamy (Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603203,) M M. Navaneethan

Abstract

Ternary Cu2SnS3 (CTS) is a less toxic, earth abundant, and low-cost p-type semiconductor material, suitable for thermoelectric applications, which can work at mid-temperature. This work aims to investigate the effect of substituting Fe on the thermoelectric properties of the CTS system. It is found that the electrical conductivity enhanced after Fe substitution due to the simultaneous enhancement of carrier concentration, as well as a reduced bandgap from 0.88 to 0.5 eV. The high power factor of ∼514 μW/mK2 was obtained for the Cu2Sn0.7Fe0.3S3 sample. The Fe substitution generated different types of phonon scatterings, such as mass fluctuation scattering arising from the difference in atomic mass of Sn and Fe and strain field scattering as a result of size and interatomic coupling force difference between Sn and Fe. Accordingly, the Fe-substituted CTS samples obtained the thermal conductivity of 0.45 W/mK at 753 K. In addition, the density functional theory calculations reveal that the substitution of Fe in Cu2SnS3 significantly alters the electronic structure and reduces the bandgap, resulting in enhanced electrical conductivity and power factor, thereby a high zT of ∼0.5 is obtained in Cu2Sn0.7Fe0.3S3.

Article Details

Volume / Issue Vol. 126, Issue 7
Published February 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

P

Parvathi Krishna

Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603203,

V

V. Vijay

Nanotechnology Research Centre (NRC), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603 203,

C

C. Kanagaraj

Nanotechnology Research Centre, Faculty of Engineering and Technology, SRM Institute of Science and Technology 3 , Kattankulathur 603203,

J

J. Archana

Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603 203,

S

S. Ponnusamy

Center of Excellence in Materials for Advanced Technologies (CeMAT), Faculty of Engineering and Technology, SRM Institute of Science and Technology 1 , Kattankulathur 603203,

M

M. Navaneethan