Probing the antiferroelectric ordering in atomically thin CuCrP2S6 by Raman spectroscopy

Q Qiaoling Huang (Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University) X Xiaoming Ma S Shenghai Pei (Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China 4 , Chengdu 610054,) N Naipeng Zhang H Hongshi Chen (College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,) C Chengrong Wei J Junyang Chen J Junfeng Dai (College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen Guangdong 518118 China) C Cai Liu (College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,) M Mingyuan Huang G Gaomin Li (College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,)

Abstract

Two-dimensional multiferroic materials, which exhibit interesting phenomena such as magnetism and ferroelectricity, have been proposed for use in next-generation nanoscale devices and sensors. However, studies to date have been mostly limited to the ferroelectricity driven by external electric field in few-layer CuCrP2S6. Here, we investigate on the observation of spontaneous antiferromagnetic ordering in the two-dimensional limit. By monitoring the Raman peaks down to monolayer arising from the off-centering displacement of Cu+ ions owing to antiferroelectric ordering at the transition temperature, we demonstrate that CuCrP2S6 exhibits antiferroelectric ordering down to the trilayer limit. Its Curie temperature of about 50 K in trilayer is much lower than 155 K of the bulk crystal, indicating that interlayer interaction has a strong effect on antiferroelectric ordering. Our studies highlight the intriguing antiferroelectric properties in two-dimensional limit and suggest that CuCrP2S6 is a promising candidate material for future multiferroic applications.

Article Details

Volume / Issue Vol. 127, Issue 20
Published November 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Q

Qiaoling Huang

Harvard John A. Paulson School of Engineering and Applied Sciences, Harvard University

X

Xiaoming Ma

S

Shenghai Pei

Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China 4 , Chengdu 610054,

N

Naipeng Zhang

H

Hongshi Chen

College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,

C

Chengrong Wei

J

Junyang Chen

J

Junfeng Dai

College of Integrated Circuits and Optoelectronic Chips Shenzhen Technology University Shenzhen Guangdong 518118 China

C

Cai Liu

College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,

M

Mingyuan Huang

G

Gaomin Li

College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University 3 , Shenzhen 518118,