Probing near-field heating effects on monolayer MoS2 photoluminescence via tip-enhanced Raman spectroscopy
Abstract
The photoluminescence (PL) intensity of monolayer MoS2 is limited by weak optical absorption due to its atomic scale thickness. To enhance PL intensity, field enhancement techniques, such as surface plasmon resonance (SPR) of metal nanoparticles, are often employed. However, SPR-induced light confinement at the nanoscale also leads to significant localized heating. In this study, we investigated the impact of near-field heating due to SPR using tip-enhanced Raman spectroscopy (TERS) and tip-enhanced photoluminescence studies. Our results reveal nearly an order-of-magnitude difference in the enhancement factors (EFs) for Raman and PL signals of monolayer MoS2, with a local temperature increase of approximately 147 °C under the TERS tip at a laser power of 10.57 mW. The reduced PL EF compared with Raman EF is attributed to additional near-field heating from SPR. We further observed that local temperature fluctuations critically affect the EFs and found that a high thermal conductivity substrate can effectively mitigate the near-field thermal effects associated with SPR.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (3)
Kishore K. Madapu
Condensed Matter Physics Division, Materials Science Group, Indira Gandhi Centre for Atomic Research 1 , Kalpakkam 603 102,
C. Abinash Bhuyan
Indira Gandhi Centre for Atomic Research, A CI of Homi Bhabha National Institute 2 , Kalpakkam 603102, Tamil Nadu,
Sandip Dhara